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| inchange semiconductor product specification silicon pnp power transistors 2SA1887 description ? with to-220f package ? low collector saturation voltage applications ? high current switching applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -80 v v ceo collector-emitter voltage open base -50 v v ebo emitter-base voltage open collector -7 v i c collector current -10 a t c =25 ?? 25 p c collector dissipation t a =25 ?? 2.0 w t j junction temperature 150 ?? t stg storage temperature -55~150 ??
inchange semiconductor product specification 2 silicon pnp power transistors 2SA1887 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-10ma ; i b =0 -50 v v cesat collector-emitter saturation voltage i c =-5a ;i b =-0.25a -0.2 -0.4 v v besat base-emitter saturation voltage i c =-5a ;i b =-0.25a -0.95 -1.4 v i cbo collector cut-off current v cb =-70v; i e =0 -1.0 | a i ebo emitter cut-off current v eb =-7v; i c =0 -1.0 | a h fe dc current gain i c =-1a ; v ce =-1v 120 400 c ob output capacitance i e =0; v cb =-10v;f=1mhz 215 pf f t transition frequency i c =-1a ; v ce =-1v 45 mhz inchange semiconductor product specification 3 silicon pnp power transistors 2SA1887 package outline fig.2 outline dimensions |
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